PXTA27 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN Darlington transistor

Philips Semiconductors
NPN Darlington transistor
Product specification
PXTA27
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_CES
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
V_BEon
f_T
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
I_E = 0; V_CB = 50 V
V_BE = 0; V_CE = 50 V
I_C = 0; V_EB = 10 V
V_CE = 5 V; see Fig.2
I_C = 10 mA
I_C = 100 mA
I_C = 100 mA; I_B = 0.1 mA
I_C = 100 mA; I_B = 0.1 mA
I_C = 100 mA; V_CE = 5 V
I_C = 30 mA; V_CE = 5 V; f = 100 MHz
MIN.
−
−
−
MAX.
100
100
100
UNIT
nA
nA
nA
10000 −
10000 −
−
1.5
−
1.5
−
2
125
−
V
V
V
MHz
80000
handbook, full pagewidth
hFE
60000
MGD837
40000
20000
0
10^−1
V_CE = 2 V.
1
10
10²
10³
IC (mA)
Fig.2 DC current gain; typical values.
1997 May 14
4