PXTA27 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN Darlington transistor

Philips Semiconductors
NPN Darlington transistor
Product specification
PXTA27
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
V_BE = 0
open collector
T_amb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
60
60
10
0.5
1
200
1.3
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
93
K/W
12
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
1997 May 14
3