PXT3906 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP switching transistor

Philips Semiconductors
PNP switching transistor
Product specification
PXT3906
handboo¹k,⁶f⁰ull pagewidth
hFE
120
80
40
−^010−2
V_CE = −1 V.
MGD835
−10^−1
−1
−10
Fig.2 DC current gain; typical values.
−10²
IC (mA)
−10³
handbook, full pagewidth
VBB
VCC
(probe)
oscilloscope
450 Ω
Vi
RB
R2
R1
RC
Vo
(probe)
oscilloscope
450 Ω
DUT
MGD624
V_i = 5 V; T = 500 µs; t_p = 10 µs; t_r = t_f ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; R_B = 3.9 kΩ; R_C = 270 Ω.
V_BB = 1.9 V; V_CC = −3 V.
Oscilloscope: input impedance Z_i = 50 Ω.
Fig.3 Test circuit for switching times.
1999 Apr 14
4