PXT3906 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP switching transistor

Philips Semiconductors
PNP switching transistor
Product specification
PXT3906
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
104
K/W
24
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
F
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I_E = 0; V_CB = −30 V
I_C = 0; V_EB = −6 V
V_CE = −1 V; (see Fig.2)
I_C = −0.1 mA
I_C = −1 mA
I_C = −10 mA
I_C = −50 mA
I_C = −100 mA
I_C = −10 mA; I_B = −1 mA
I_C = −50 mA; I_B = −5 mA
I_C = −10 mA; I_B = −1 mA
I_C = −50 mA; I_B = −5 mA
I_E = i_e = 0; V_CB = −5 V; f = 1 MHz
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz
I_C = −10 mA; V_CE = −20 V; f = 100 MHz
I_C = −100 µA; V_CE = −5 V; R_S = 1 kΩ;
f = 10 Hz to 15.7 kHz
−
−
60
80
100
60
30
−
−
−650
−
−
−
250
−
Switching times (between 10% and 90% levels); (see Fig.3)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = −10 mA; I_Bon = −1 mA; I_Boff = 1 mA −
−
−
−
−
−
MAX.
−50
−50
UNIT
nA
nA
−
−
300
−
−
−250
−400
−850
−950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
65
ns
35
ns
35
ns
300
ns
225
ns
75
ns
1999 Apr 14
3