PTB23006U Datasheet, PDF (4/12 Pages) NXP Semiconductors – Microwave power transistor

Philips Semiconductors
Microwave power transistor
Preliminary specification
PTB23006U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
T_j = 75 °C
note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
MAX.
8.5
0.7
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CES
V_(BR)CBO
V_(BR)CES
V_(BR)EBO
h_FE
collector cut-off current
I_E = 0; V_CE = 30 V
collector-base breakdown voltage I_C = 3 mA; I_E = 0
collector-emitter breakdown voltage I_C = 3 mA; R_BE = 0
emitter-base breakdown voltage I_C = 1.5 mA
DC current gain
I_C = 450 mA; V_CE = 3 V
MIN.
−
40
40
3
15
MAX.
300
−
−
−
150
UNIT
µA
V
V
V
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common-base class C test circuit.
MODE OF
f
V_CE
P_L
G_p
OPERATION (GHz)
(V)
(W)
(dB)
class C (CW)
2
28
>5
>9
typ. 5.8
typ. 10.5
η_C
(%)
>40
typ. 45
Z_i; Z_L
(Ω)
see Figs 5
and 6
1997 Feb 19
4