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PTB23006U Datasheet, PDF (3/12 Pages) NXP Semiconductors – Microwave power transistor | |||
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Philips Semiconductors
Microwave power transistor
Preliminary speciï¬cation
PTB23006U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
VCEO
VEBO
IC
Ptot
Tstg
Tj
Tsld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
RBE = 0
open base
open collector
Tmb = 75 °C
t ⤠10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MIN.
â
â
â
â
â
â
â65
â
â
MAX.
40
40
15
3
0.75
11
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
12
handbook, halfpage
P tot
(W)
8
MLC461
4
0
0
50
100
150
200
Tmb (oC)
Fig.2 Power derating curve.
1997 Feb 19
3
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