PSS8550 Datasheet, PDF (4/10 Pages) NXP Semiconductors – PNP medium power 25 V transistor

Philips Semiconductors
PNP medium power 25 V transistor
Product specification
PSS8550
400
handbook, halfpage
hFE
300
(1)
200
(2)
100
(3)
MLD958
−^010−1
−1
−10
PSS8550C V_CE = −1 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
−10²
−10³
−10⁴
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
−1200
handbook, halfpage
VBE
(mV)
−1000
(1)
−800
(2)
−600
(3)
−400
MLD959
−20_−010_−1
−1
−10
PSS8550C V_CE = −1 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10²
−10³
−10⁴
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−10³
handbook, halfpage
VCEsat
(mV)
−10²
MLD960
(2) ⁽¹⁾
−10
−10^−1
−1
PSS8550C I_C/I_B = 10.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
(3)
−10
−10²
−10³ − 10⁴
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
handb^−o¹o²k,⁰h⁰alfpage
VBEsat
(mV)
−1000
−800
−600
MLD962
(1)
(2)
(3)
−400
−20_−010_−1
−1
−10
PSS8550C I_C/I_B = 10.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10²
−10³
−10⁴
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Aug 10
4