PSS8550 Datasheet, PDF (3/10 Pages) NXP Semiconductors – PNP medium power 25 V transistor

Philips Semiconductors
PNP medium power 25 V transistor
Product specification
PSS8550
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
in free air; note 2
in free air; note 3
VALUE
147
139
125
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².
3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Operated under pulsed conditions: pulse width t_p ≤ 1 s; duty cycle δ ≤ 0.75%.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BEon
f_T
C_c
collector-base cut-off current
V_CB = −35 V; I_E = 0
−
V_CB = −35 V; I_E = 0;
−
T_amb = 150 °C
collector-emitter cut-off current
V_CE = −25 V; I_B = 0
−
emitter-base cut-off current
V_EB = −6 V; I_C = 0
−
DC current gain
I_C = −5 mA; V_CE = −1 V
45
DC current gain
I_C = −800 mA; V_CE = −1 V
40
I_C = −100 mA; V_CE = −1 V
PSS8550C
120
PSS8550D
160
collector-emitter saturation voltage I_C = −800 mA; I_B = −80 mA
−
base-emitter saturation voltage
I_C = −800 mA; I_B = −80 mA
−
base-emitter turn-on voltage
I_C = −10 mA; V_CE = −1 V
−
transition frequency
I_C = −50 mA; V_CE = −10 V;
100
f = 100 MHz
collector capacitance
V_CB = 10 V; I_E = i_e = 0; f = 1 MHz −
−
−100 nA
−
−50 µA
−
−100 nA
−
−100 nA
−
−
−
−
−
−
−190
−
−
−
200
300
−500
−1.2
−1
−
mV
V
V
MHz
−
12
pF
2004 Aug 10
3