PRTR5V0U2X Datasheet, PDF (4/10 Pages) NXP Semiconductors – Ultra low capacitance double rail-to-rail ESD protection diode in SOT143B

Philips Semiconductors
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
6. Characteristics
Table 7: Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_RWM
I_R
V_BR
C_(I/O-GND)
reverse stand-off voltage
reverse current; pin 2, 3 and 4 to ground
breakdown voltage; pin 4 to ground
input to ground capacitance; pin 2 and 3 to
ground
V_R = 3 V
f = 1 MHz; V_(I/O-GND) = 0 V
C_(I/O-I/O)
C_sup
V_F
input to input capacitance; pin 2 to pin 3
supply capacitance; pin 4 to ground
forward voltage
f = 1 MHz; V_(I/O-I/O) = 0 V
f = 1 MHz; V_CC = 0 V
Min Typ Max Unit
-
-
5.5 V
-
< 1 100 nA
6
-
9
V
-
1
-
pF
-
0.6 -
pF
-
16 -
pF
-
0.7 -
V
2.0
C_(I/O-GND)
(pF)
1.6
006aaa483
1.0
C_(I/O-I/O)
(pF)
0.8
006aaa484
1.2
0.6
0.8
0.4
0.4
0.2
0
0
1
2
3
4
5
V_(I/O-GND) (V)
f = 1 MHz; T_amb = 25 °C
Fig 2. Input to ground capacitance as a function of
input to ground voltage; typical values
0
0
1
2
3
4
5
V_(I/O-I/O) (V)
f = 1 MHz; T_amb = 25 °C
Fig 3. Input to input capacitance as a function of input
to input voltage; typical values
9397 750 15163
Product data sheet
Rev. 01 — 22 September 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
4 of 10