PRF949 Datasheet, PDF (4/7 Pages) NXP Semiconductors – UHF wideband transistor

Philips Semiconductors
UHF wideband transistor
Preliminary specification
PRF949
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics
V_(BR)CBO
V_(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown
voltage
I_C = 100 µA; I_E = 0
I_C = 100 µA; I_B = 0
20
−
−
V
10
−
−
V
V_(BR)EBO
V_BEF
I_CBO
I_EBO
h_FE
emitter-base breakdown voltage
forward base-emitter voltage
collector-base leakage current
emitter-base leakage current
DC current gain
I_E = 10 µA; I_C = 0
I_E = 25 mA
V_CB = 10 V; I_E = 0
V_EB = 1 V; I_C = 0
I_C = 5 mA; V_CE = 6 V
I_C = 15 mA; V_CE = 6 V
1.5 −
−
V
−
−
1.05 V
−
−
100 nA
−
−
100 nA
100 150 200
−
150 −
AC characteristics
C_re
f_T
|s₂₁|²
G_UM
NF
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
noise figure
I_C = 0; V_CB = 6 V; f = 1 MHz
−
I_C = 15 mA; V_CE = 6 V; f_m = 1 GHz 7
I_C = 15 mA; V_CE = 6 V; f = 1 GHz 13
I_C = 15 mA; V_CE = 6 V;
−
T_amb = 25 °C; f = 1 GHz
I_C = 15 mA; V_CE = 6 V;
−
T_amb = 25 °C; f = 2 GHz
Γ_S = Γ_opt; I_C = 5 mA; V_CE = 6 V;
−
f = 1 GHz
0.3 tbf
9
−
15
−
16
−
pF
GHz
dB
dB
10
−
dB
1.5 2.5 dB
Γ_S = Γ_opt; I_C = 5 mA; V_CE = 6 V;
−
2.1 −
dB
f = 2 GHz
Note
1.
G_UM is the maximum unilateral power gain, assuming s₁₂ is zero.
G_UM
=
10
log -----------------------s----²--¹----²-----------------------
(1 – s₁₁ ²)(1 – s₂₂ ²)
dB
1999 Oct 29
4