PRF949 Datasheet, PDF (3/7 Pages) NXP Semiconductors – UHF wideband transistor

Philips Semiconductors
UHF wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_C(AV)
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s = 60 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction
to soldering point
CONDITIONS
P_tot = 180 mW; T_s = 90 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
Preliminary specification
PRF949
MIN.
−
−
−
−
−
−
−65
−
MAX.
20
10
1.5
50
50
250
+150
175
UNIT
V
V
V
mA
mA
mW
°C
°C
VALUE
335
UNIT
K/W
1999 Oct 29
3