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| PMPB20EN_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – 30 V N-channel Trench MOSFET | |||
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NXP Semiconductors
PMPB20EN
30 V N-channel Trench MOSFET
102
ID
(A)
10
1
Limit RDSon = VDS/ID
017aaa541
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
10-1
DC; Tsp = 25 °C
tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-1
1
IDM = single pulse
10
102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
235 270 K/W
[2]
-
67
74
K/W
[3]
-
33
36
K/W
-
5
10
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ⤠5 s
PMPB20EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 January 2014
© NXP N.V. 2014. All rights reserved
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