|
PMPB20EN_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V N-channel Trench MOSFET | |||
|
PMPB20EN
30 V N-channel Trench MOSFET
14 January 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
⢠Trench MOSFET technology
⢠Very fast switching
⢠Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
⢠Exposed drain pad for excellent thermal conduction
⢠Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
⢠Charging switch for portable devices
⢠DC-to-DC converters
⢠Power management in battery-driven portables
⢠Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ⤠5 s
VGS = 10 V; ID = 7 A; Tj = 25 °C
Min Typ Max Unit
-
-
30
V
-20 -
20
V
[1]
-
-
10.4 A
-
16.5 19.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Scan or click this QR code to view the latest information for this product
|
▷ |