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| PMF87EN Datasheet, PDF (4/14 Pages) NXP Semiconductors – 30 V, single N-channel Trench MOSFET | |||
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NXP Semiconductors
PMF87EN
30 V, single N-channel Trench MOSFET
10
ID
(A)
Limit RDSon = VDS/ID
1
017aaa725
tp = 100 µs
tp = 1 ms
10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
tp = 10 ms
tp = 100 ms
10-2
10-1
1
IDM = single pulse
10
102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
394 453 K/W
[2]
-
308 354 K/W
[3]
-
263 302 K/W
-
60
70
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ⤠5 s.
PMF87EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2012
© NXP B.V. 2012. All rights reserved
4 / 14
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