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PMF87EN Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, single N-channel Trench MOSFET
PMF87EN
30 V, single N-channel Trench MOSFET
1 August 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
1.3 Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 1.7 A; Tj = 25 °C
Min Typ Max Unit
-
-
30
V
-20 -
20
V
[1]
-
-
1.9 A
-
67
80
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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