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PMBD2837 Datasheet, PDF (4/8 Pages) NXP Semiconductors – High-speed double diodes | |||
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Philips Semiconductors
High-speed double diodes
Product speciï¬cation
PMBD2837; PMBD2838
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
PMBD2837
PMBD2838
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
MIN. MAX. UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
â
715 mV
â
855 mV
â
1V
IF = 150 mA
â
1.25 V
see Fig.5
VR = 30 V
â
100 nA
VR = 30 V; Tj = 150 °C
VR = 50 V
VR = 50 V; Tj = 150 °C
â
40 µA
â
100 nA
â
50 µA
f = 1 MHz; VR = 0; see Fig.6
â
when switched from IF = 10 mA to
â
IR = 10 mA; RL = 100 â¦;
measured at IR = 1 mA; see Fig.7
2.5 pF
4 ns
when switched from IF = 10 mA;
â
tr = 20 ns; see Fig.8
1.75 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
1996 Sep 18
4
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