PMBD2837 Datasheet, PDF (3/8 Pages) NXP Semiconductors – High-speed double diodes

Philips Semiconductors
High-speed double diodes
Product specification
PMBD2837; PMBD2838
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
V_RRM
repetitive peak reverse voltage
PMBD2837
PMBD2838
V_R
continuous reverse voltage
PMBD2837
PMBD2838
I_F
continuous forward current
I_FRM
repetitive peak forward current
I_FSM
non-repetitive peak forward current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; T_j = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
T_amb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
35 V
−
75 V
−
30 V
−
50 V
−
215 mA
−
125 mA
450 mA
−
4A
−
1A
−
0.5 A
−
250 mW
−65
+150 °C
−
150 °C
1996 Sep 18
3