PLB16030U Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PLB16030U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting base T_j = 100 °C
thermal resistance from mounting base to heatsink note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
MAX.
2.4
0.3
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_CES
collector cut-off current
I_EBO
emitter cut-off current
CONDITIONS
V_CB = 28 V; I_E = 0
V_CB = 35 V; I_E = 0
V_CE = 28 V; R_BE = 0 Ω
V_EB = 1.5 V; I_C = 0
MAX
0.9
1.8
1.8
90
UNIT
mA
mA
mA
µA
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common-base test circuit and working in CW class B mode.
MODE OF
f
V_CC
P_L
G_p
η_C
OPERATION
(GHz)
(V)
(W)
(dB)
(%)
Z_i; Z_L
(Ω)
Class B (CW); note 1 1.6
28
Class B - 100 ms 50% 1.6
28
≥30
typ. 38
≥7;
typ. 8.2
typ. 8.8
≥45;
typ. 52
typ. 56
see Figs 5 and 6
Note
1. May be used for narrowband or broadband amplifiers within the frequency range 1.4 to 1.8 GHz. Operation below
1.4 GHz may damage the transistor due to resonance of the internal output prematching circuit.
List of components (see Fig.4)
COMPONENT
L1, L2
C1
C2
C3, C4
C5
DESCRIPTION
VALUE
5 turns 0.2 mm diameter copper wire
DC blocking capacitor
100 pF
feedthrough bypass capacitor
trimmer capacitor
0.4 to 2.5 pF
electrolytic capacitor
150 µF
DIMENSIONS
int. dia. 2 mm
CATALOGUE NO.
Erie, ref.1250-003
Tekelec AT-3-7281SL
1997 Feb 18
4