PLB16030U Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R_BE = 0 Ω
open collector
T_mb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.3 mm from ceramic.
Product specification
PLB16030U
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
45
15
40
3
2.6
40
+150
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook,⁶h⁰alfpage
Ptot
(W)
40
MCD394
20
0
−50
0
50
100
150
200
Tmb (^oC)
P_{tot max} = 40 W.
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
handbook,⁴h⁰alfpage
PL
(W)
30
20
10
00
2
MCD395
4
6
8
PSOURCE (W)
V_CC = 28 V; f = 1.6 GHz.
Fig.3 Load power as a function of source power.
1997 Feb 18
3