PIMH9 Datasheet, PDF(4/8 Page) NXP Semiconductors – NPN resistor-equipped double transistor; R1 = 10 kohm, R2 = 47 kohm

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PIMH9 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN resistor-equipped double transistor; R1 = 10 kohm, R2 = 47 kohm

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Philips Semiconductors

NPN resistor-equipped double transistor;

R1 = 10 kâ¦, R2 = 47 kâ¦

Product speciï¬cation

PIMH9

CHARACTERISTICS

Tamb = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

Per transistor

ICBO

collector-base cut-off current

ICEO

collector-emitter cut-off current

IEBO

hFE

VCEsat

Vi(off)

Vi(on)

RR-----21--

emitter-base cut-off current

DC current gain

saturation voltage

input off voltage

input on voltage

input resistor

resistor ratio

collector capacitance

CONDITIONS

MIN. TYP. MAX. UNIT

VCB = 50 V; IE = 0

VCE = 50 V; IB = 0

VCE = 30 V; IB = 0; Tj = 150 Â°C â

VEB = 5 V; IC = 0

VCE = 5 V; IC = 5 mA

100 â

IC = 5 mA; IB = 0.25 mA

VCE = 5 V; IC = 100 ÂµA

0.7

VCE = 0.3 V; IC = 1 mA

1.4 0.8

3.7 4.7

100 nA

ÂµA

150 ÂµA

100 mV

0.5 V

kâ¦

5.7

IE = ie = 0; VCB = 10 V;

f = 1 MHz

2.5 pF

2001 Sep 13

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