PIMH9 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped double transistor; R1 = 10 kohm, R2 = 47 kohm

Philips Semiconductors
NPN resistor-equipped double transistor;
R1 = 10 kΩ, R2 = 47 kΩ
Product specification
PIMH9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V_CBO
V_CEO
V_EBO
V_I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I_O
I_CM
P_tot
T_stg
T_j
T_amb
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
P_tot
total power dissipation
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
T_amb ≤ 25 °C; note 1
−
50
V
−
50
V
−
10
V
−
+40
V
−
−10
V
−
100
mA
−
100
mA
−
300
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
600
mW
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
thermal resistance from junction to ambient note 1
208
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
2001 Sep 13
3