PHX8ND50E Datasheet, PDF (4/8 Pages) NXP Semiconductors – PowerMOS transistors FREDFET, Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_hs)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_hs); conditions: V_GS ≥ 10 V
100 ^{ID, Drain current (Amps)}
10
RDS(ON) ^{= VDS/ID}
1
DC
0.1
PHX5N50
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.01
1
10
100
1000
VDS, Drain-source voltage (Volts)
10000
Fig.3. Safe operating area. T_hs = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Product specification
PHX8ND50E
10 ^{Zth j-hs, Transient thermal impedance (K/W) PHX4N60}
D = 0.5
1 0.2
0.1
0.05
0.1 ^0.02
0.01
P_D
tp
D
=
tp
T
single pulse
T
t
0.0011us
10us 100us 1ms
10ms 100ms
1s
tp, pulse width (s)
Fig.4. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
30 ^{ID, Drain current (Amps)}
Tj = 25 C
25
20
15
10
5
PHP8N50
10 V
7V
6.5 V
6V
5.5 V
5V
VGS = 4.5 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
I_D = f(V_DS); parameter V_GS
2 ^{RDS(on), Drain-Source on resistance (Ohms) PHP8N50}
4.5 V
5V
5.5 V VGS = 6 V ^{Tj = 25 C}
1.5
6.5 V
7V
1
10 V
0.5
0
0
5
10
15
20
25
ID, Drain current (Amps)
Fig.6. Typical on-state resistance.
R_DS(ON) = f(I_D); parameter V_GS
August 1998
4
Rev 1.100