PHX8ND50E Datasheet, PDF (1/8 Pages) NXP Semiconductors – PowerMOS transistors FREDFET, Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHX8ND50E
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
• Fast reverse recovery diode
d
g
s
QUICK REFERENCE DATA
V_DSS = 500 V
I_D = 4.2 A
R_DS(ON) ≤ 0.85 Ω
t_rr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
incorporating a Fast Recovery
Epitaxial Diode (FRED). This gives
improved switching performance in
half bridge and full bridge
converters making this device
particularly suitable for inverters,
lighting ballasts and motor control
circuits.
The PHX8ND50E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN
DESCRIPTION
1 gate
2 drain
3 source
case isolated
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current¹
Total dissipation
Operating junction and
storage temperature range
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_hs = 25 ˚C; V_GS = 10 V
T_hs = 100 ˚C; V_GS = 10 V
T_hs = 25 ˚C
T_hs = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
4.2
2.7
34
37
150
UNIT
V
V
V
A
A
A
W
˚C
August 1998
1
Rev 1.100