PHX6N60E Datasheet, PDF (4/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_hs)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_hs); conditions: V_GS ≥ 10 V
100 ^{ID, Drain current (Amps)}
10
RDS(ON) ^{= VDS/ID}
1
DC
0.1
PHX6N60E
tp =
10 us
100us
1 ms
10ms
0.1s
0.01
10
100
VDS, Drain-source voltage (Volts)
1000
Fig.3. Safe operating area. T_hs = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Product specification
PHX6N60E
Zth j-hs, Transient thermal impedance (K/W)
10
0.5
1 _0.2
0.1
0.05
0.1 _0.02
0.01
0
P_D
tp
D
=
tp
T
T
t
0.001
1us 10us 100us 1ms 10ms 100ms 1s
tp, pulse width (s)
PHX6N60E
Fig.4. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
10 ^{ID, Drain current (Amps)}
Tj = 25 C
10 V
VGS = 20 V
8
6
PHP6N60E
6.5 V
6V
5.5 V
4
5V
2
4.5 V
4V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics.
I_D = f(V_DS); parameter V_GS
Drain-source on resistance, RDS(on) (Ohms) PHP6N60E
4
4.5 V 5 V
5.5 V
6V
3.5
6.5 V
3
2.5
10 V
2
VGS = 20 V
1.5
Tj = 25 C
1
0
2
4
6
8
10
ID, Drain current (Amps)
Fig.6. Typical on-state resistance.
R_DS(ON) = f(I_D); parameter V_GS
December 1998
4
Rev 1.200