PHX6N60E Datasheet, PDF (1/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX6N60E
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
d
g
s
QUICK REFERENCE DATA
V_DSS = 600 V
I_D = 2.8 A
R_DS(ON) ≤ 1.8 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHX6N60E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN
DESCRIPTION
1 gate
2 drain
3 source
case isolated
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_hs = 25 ˚C; V_GS = 10 V
T_hs = 100 ˚C; V_GS = 10 V
T_hs = 25 ˚C
T_hs = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
± 30
2.8
1.8
21
35
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
E_AR
I_AS, I_AR
Non-repetitive avalanche
energy
Unclamped inductive load, I_AS = 4.4 A;
t_p = 0.2 ms; T_j prior to avalanche = 25˚C;
V_DD ≤ 50 V; R_GS = 50 Ω; V_GS = 10 V; refer
to fig:17
Repetitive avalanche energy¹ I_AR = 5.4 A; t_p = 2.5 µs; T_j prior to
avalanche = 25˚C; R_GS = 50 Ω; V_GS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
341
10
5.4
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by T_j max.
December 1998
1
Rev 1.200