PHT1N60R Datasheet, PDF (4/5 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Objective specification
PHT1N60R
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
0.32
0.24
6.7
6.3
3.1
B
2.9
4
A
0.2 M A
0.10
0.02
3.7
7.3
3.3
6.7
16
13
max
10
max
1.8
1.05
max
0.85
1
2
2.3
0.80
0.60
4.6
3
0.1 M B
(4x)
Fig.3. SOT223 surface mounting package.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent dam-
age to MOS gate oxide.
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
February 1998
4
Rev 1.000