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| PHT1N60R Datasheet, PDF (2/5 Pages) NXP Semiconductors – PowerMOS transistor | |||
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Philips Semiconductors
PowerMOS transistor
Objective specification
PHT1N60R
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-sp
Rth j-a
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:2
MIN. TYP. MAX. UNIT
-
-
15 K/W
- 156 - K/W
-
70
- K/W
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
Drain-source breakdown volt-
age
Gate threshold voltage
Drain-source leakage current
IGSS
RDS(ON)
VSD
Gate-source leakage current
Drain-source on-state resis-
tance
Source-drain diode forward
voltage
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VDS = 500 V; VGS = 0 V; Tj = 25 ËC
VDS = 400 V; VGS = 0 V; Tj = 125 ËC
VGS = ±35 V; VDS = 0 V
VGS = 10 V; ID = 1 A
IF = 2 A ;VGS = 0 V
MIN. TYP. MAX. UNIT
600 -
-
V
2.0 3.0 4.0 V
-
1 100 µA
-
0.1 1.0 mA
-
4 100 nA
-
- 16.0 â¦
- 0.85 1.2 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
trr
Qrr
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Total gate charge
Gate to source charge
Gate to drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-drain diode Reverse
recovery time
Source-drain diode Reverse
recovery charge
CONDITIONS
VDS = 15 V; ID = 1 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VGS = 10 V; ID = 2 A; VDS = 400 V
VDD = 30 V; ID = 2 A;
VGS = 10 V; RGS = 50 â¦;
RGEN = 50 â¦
IF = 2 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 100 V
MIN.
0.5
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.8
75
10
5
5
.5
3
5
15
15
7
150
MAX.
-
100
15
10
-
-
-
10
20
20
15
-
UNIT
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
1.5
-
µC
February 1998
2
Rev 1.000
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