PHP222 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Dual P-channel enhancement mode MOS transistor

Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Preliminary specification
PHP222
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per P-channel
V_(BR)DSS
V_GSth
I_DSS
I_GSS
R_DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
Q_G
total gate charge
Q_GS
gate-source charge
Q_GD
gate-drain charge
Switching times
t_d(on)
t_r
t_on
t_d(off)
t_f
t_off
turn-on delay time
rise time
turn-on switching time
turn-off delay time
fall time
turn-off switching time
Source-drain diode
V_SD
source-drain diode forward
voltage
t_rr
reverse recovery time
CONDITIONS
MIN. TYP. MAX. UNIT
V_GS = 0; I_D = −10 µA
−30 − −
V
V_GS = V_DS; I_D = −1 mA
−0.4 − −
V
V_GS = 0; V_DS = −24 V
−
− −100 nA
V_GS = ±8 V; V_DS = 0
−
− ±100 nA
V_GS = −4.5 V; I_D = −1.6 A
−
− 200 mΩ
V_GS = −2.5 V; I_D = −1.6 A
−
− 220 mΩ
V_GS = −1.8 V; I_D = −0.8 A
−
− 250 mΩ
V_GS = 0; V_DS = −24 V; f = 1 MHz
−
696 −
pF
V_GS = 0; V_DS = −24 V; f = 1 MHz
−
163 −
pF
V_GS = 0; V_DS = −24 V; f = 1 MHz
−
73 −
pF
V_GS = −4.5 V; V_DD = −15 V;
I_D = −1 A; T_amb = 25 °C
−
16 −
nC
V_DD = −15 V; I_D = −1 A; T_amb = 25 °C −
0.7 −
nC
V_DD = −15 V; I_D = −1 A; T_amb = 25 °C −
4.1 −
nC
V_GS = 0 to −8 V; V_DD = −20 V;
I_D = −1 A; R_gen = 6 Ω
V_GS = −8 to 0 V; V_DD = −20 V;
I_D = −1 A; R_gen = 6 Ω
−
3.5 −
ns
−
4−
ns
−
7.5 −
ns
−
90 −
ns
−
35 −
ns
−
125 −
ns
V_GD = 0; I_S = −1.25 A
I_S = −1.25 A; di/dt = 100 A/µs
−
− −1.3 V
−
65 −
ns
1998 Apr 01
4