PHP222 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Dual P-channel enhancement mode MOS transistor

Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Preliminary specification
PHP222
FEATURES
• Very low on-state resistance
• High-speed switching
• No secondary breakdown
• Low threshold.
APPLICATIONS
• Power management
• DC-DC converters
• General purpose switch.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
1
s₁
2
g₁
3
s₂
4
g₂
5
d₂
6
d₂
7
d₁
8
d₁
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin SOT96-1 (SO8) SMD plastic package.
handbook, halfpage
8
5
d1 d1
d2 d2
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
1
4
MAM119
s1
g1
s2
g2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
V_DS
V_SD
V_GSO
V_GSth
I_D
R_DSon
P_tot
PARAMETER
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
I_S = −1.25 A; V_GD = 0
open drain
I_D = −1 mA; V_DS = V_GS
T_s = 80 °C
I_D = −1.6 A; V_GS = −2.5 V
T_s = 80 °C
MIN.
−
−
−
−0.4
−
−
−
MAX.
−30
−1.3
±8
−
−3.2
220
3.5
UNIT
V
V
V
V
A
mΩ
W
1998 Apr 01
2