PHP1N60 Datasheet, PDF (4/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
PHP1N60
Drain current, ID (A)
5
VDD = 30 V
4
3
2
PHP1N60A
Tj = 25 C
150 C
1
0
0
2
4
6
8
10
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I_D = f(V_GS); parameter T_j
2 ^{Transconductance, gfs (S)}
VDD = 30 V
1.5
Tj = 25 C
1
150 C
0.5
PHP1N60A
0
0
1
2
3
4
5
Drain current, ID (A)
Fig.8. Typical transconductance.
g_fs = f(I_D); parameter T_j
a
Normalised RDS(ON) = f(Tj)
2
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 1 A; V_GS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 0.25 mA; V_DS = V_GS
1E-01 ^{ID / A}
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1E-06
0
1
2
3
4
VGS / V
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
1000 ^{Capacitances, Ciss, Coss, Crss (pF)}
Ciss
100
Coss
10
Crss
PHP1N60A
1
1
10
100
1000
Drain-source voltage, VDS (V)
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
June 1997
4
Rev 1.000