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| PHP1N60 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor | |||
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Philips Semiconductors
PowerMOS transistor
Product specification
PHP1N60
ELECTRICAL CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
âV(BR)DSS /
âTj
RDS(ON)
VGS(TO)
gfs
IDSS
Drain-source breakdown
voltage
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
IGSS
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
Ld
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VGS = 10 V; ID = 1 A
VDS = VGS; ID = 0.25 mA
VDS = 30 V; ID = 1 A
VDS = 600 V; VGS = 0 V
VDS = 480 V; VGS = 0 V; Tj = 125 ËC
VGS = ±30 V; VDS = 0 V
ID = 2 A; VDD = 360 V; VGS = 10 V
VDD = 300 V; ID = 2 A;
RG = 24 â¦; RD = 150 â¦
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN.
600
-
-
2.0
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.7
-
V/K
4.6 6.0 â¦
3.0 4.0 V
1.4
-
S
1 100 µA
60 500 µA
10 200 nA
20 25 nC
2
3
nC
9
15 nC
10
-
ns
20
-
ns
60
-
ns
20
-
ns
3.5
-
nH
4.5
-
nH
7.5
-
nH
236 -
pF
34
-
pF
20
-
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
Tmb = 25ËC
(body diode)
ISM
Pulsed source current (body Tmb = 25ËC
diode)
VSD
Diode forward voltage
IS = 1.9 A; VGS = 0 V
trr
Reverse recovery time
IS = 1.9 A; VGS = 0 V;
dI/dt = 100 A/µs
Qrr
Reverse recovery charge
MIN. TYP. MAX. UNIT
-
-
1.9 A
-
-
7.6 A
-
-
1.2 V
- 360 -
ns
-
2.4
-
µC
June 1997
2
Rev 1.000
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