PDTC323TK Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN 500 mA, 15 V resistor-equipped transistor;l

Philips Semiconductors
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
10³
h_FE
006aaa447
(1)
(2)
(3)
10²
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10^−1
V_CEsat
(V)
006aaa448
(1)
(2)
(3)
10^−2
10^−1
1
10
10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14946
Product data sheet
Rev. 01 — 3 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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