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| PDTC323TK Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN 500 mA, 15 V resistor-equipped transistor;l | |||
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Philips Semiconductors
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kâ¦, R2 = open
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
Min
Typ
Max
[1] -
-
500
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
current
ICEO
collector-emitter
VCE = 15 V; IB = 0 A
cut-off current
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 50 mA
IC = 50 mA; IB = 2.5 mA
R1
bias resistor 1 (input)
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
0.5 µA
-
-
100 nA
100 300 -
-
25 80 V
1.54 2.2
-
7
2.86 kâ¦
-
pF
9397 750 14946
Product data sheet
Rev. 01 â 3 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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