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PDTC144EK Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor
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Philips Semiconductors
NPN resistor-equipped transistor
Objective specification
PDTC144EK
103
handbook, halfpage
hFE
102
MGM928
(2) (1)
(3)
10−1
handbook, halfpage
VCEsat
(V)
MGM927
(1)
(2)
(3)
10
1
10−1
1
10
102
IC (mA)
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10−2
10−1
1
10
102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
10
handbook, halfpage
Vi(off)
(V)
(1)
1
(2)
(3)
MGM930
102
handbook, halfpage
Vi(on)
(V)
10
1
(1) (2) (3)
MGM929
10−110−2
10−1
1
10
IC (mA)
VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1998 May 19
4
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