PDTC144EK Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN resistor-equipped transistor

Philips Semiconductors
NPN resistor-equipped transistor
Objective specification
PDTC144EK
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
MAX.
50
50
10
UNIT
V
V
V
−
+40
V
−
−10
V
−
100
mA
−
100
mA
−
250
mW
−55
+150
°C
−
150
°C
−55
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
collector cut-off current
I_E = 0; V_CB = 50 V
−
I_CEO
collector cut-off current
I_B = 0; V_CE = 30 V
−
I_B = 0; V_CE = 30 V; T_j = 150 °C −
I_EBO
emitter cut-off current
I_C = 0; V_EB = 5 V
−
h_FE
DC current gain
I_C = 5 mA; V_CE = 5 V
80
V_CEsat collector-emitter saturation voltage I_C = 10 mA; I_B = 0.5 mA
−
V_i(off)
input-off voltage
I_C = 100 µA; V_CE = 5 V
−
V_i(on)
input-on voltage
I_C = 2 mA; V_CE = 300 mV
3
R1
input resistor
33
−
100 nA
−
1
µA
−
50
µA
−
90
µA
−
−
−
150 mV
1.2 0.8 V
1.6 −
V
47
61
kΩ
RR-----21--
resistor ratio
0.8 1
1.2
C_c
collector capacitance
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
−
2.5 pF
1998 May 19
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