PDTB114ET Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Objective specification
PDTB114ET
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
I_CEO
collector cut-off current
collector cut-off current
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
CONDITIONS
I_E = 0; V_CB = −50 V
I_B = 0; V_CE = −30 V
I_B = 0; V_CE = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −5 mA; V_CE = −5 V; note 1
I_C = −50 mA; I_B = −2.5 mA; note 1
I_C = −100 µA; V_CE = −5 V
I_C = −10 mA; V_CE = −300 mV
MIN.
−
−
−
−
56
−
−
−3
7
TYP.
−
−
−
−
−
−
−
−
10
MAX. UNIT
−100 nA
−1 µA
−50 µA
−500 µA
−
−300 mV
−500 mV
−
V
13 kΩ
RR-----21--
resistor ratio
C_c
collector capacitance
0.8 1
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
−
1.2
9
pF
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
1997 Sep 02
4