PDTA143XT Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor

Philips Semiconductors
PNP resistor-equipped transistor
Product specification
PDTA143XT
10³
handbook, halfpage
hFE
10²
10
MGR818
(2)
(1)
(3)
handboo^−k¹, ⁰h³alfpage
VCEsat
(mV)
−10²
MGR821
(1)
(3)
(2)
1
−10^−1
−1
−10 _{IC (mA)} −10²
V_CE = −5 V.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
−10
−1
−10
IC (mA)
−10²
I_C/I_B = 20.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
handbook,^−h²alfpage
Vi(off)
(V)
−1.6
MGR819
−1.2
(1)
−0.8
(2)
(3)
−0.4
0
−10^−2
−10^−1
−1 _{IC (mA)} −10
V_CE = −5 V.
(1) T_amb = −40 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
handbook^−,¹h⁰alfpage
Vi(on)
(V)
−8
−6
MGR820
−4
−2
0
−10^−1
−1
(1)
(3)
(2)
−10 _{IC (mA)} −10²
V_CE = −0.3 V.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 Apr 20
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