|
PDTA143XT Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP resistor-equipped transistor | |||
|
◁ |
Philips Semiconductors
PNP resistor-equipped transistor
Product speciï¬cation
PDTA143XT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 standard mounting conditions.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
IE = 0; VCB = â50 V
IB = 0; VCE = â30 V
IB = 0; VCE = â30 V; Tj = 150 °C
IC = 0; VEB = â5 V
IC = â10 mA; VCE = â5 V
IC = â10 mA; IB = â0.5 mA
IC = â100 µA; VCE = â5 V
IC = â20 mA; VCE = â0.3 V
â
â
â
â
â
â
â
â
50 â
â
â
â
â
â2.5 â
3.3 4.7
â100 nA
â1 µA
â50 µA
â0.6 mA
â
â150 mV
â0.3 V
â
V
6.1 kâ¦
RR-----21--
resistor ratio
1.7 2.1 2.6
Cc
collector capacitance
IE = ie = 0; VCB = â10 V; f = 1 MHz â
â
3
pF
1999 Apr 20
3
|
▷ |