PDTA114Y Datasheet, PDF (4/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product specification
PDTA114Y series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
V_I
I_O
I_CM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
MAX.
−50
−50
−10
UNIT
V
V
V
+6
V
−40
V
−100
mA
−100
mA
500
mW
250
mW
250
mW
200
mW
250
mW
250
mW
150
mW
+150
°C
150
°C
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
note 1
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
VALUE
250
500
500
625
500
500
833
2004 Aug 02
4
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W