PDTA114Y Datasheet, PDF (2/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = 47 kOHM

Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product specification
PDTA114Y series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
10
47
MAX. UNIT
−50 V
−100 mA
−
kΩ
−
kΩ
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTA114YE
PDTA114YEF
PDTA114YK
PDTA114YM
PDTA114YS
PDTA114YT
PDTA114YU
PACKAGE
PHILIPS
EIAJ
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE NPN COMPLEMENT
36
37
54
DF
TA114Y
*29⁽¹⁾
*55⁽¹⁾
PDTC114YE
PDTC114YEF
PDTC114YK
PDTC114YM
PDTC114YS
PDTC114YT
PDTC114YU
2004 Aug 02
2