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J108 Datasheet, PDF (4/7 Pages) NXP Semiconductors – N-channel silicon junction FETs
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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
DYNAMIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Cis
input capacitance
Crs
reverse transfer capacitance
Switching times; see Fig.2
CONDITIONS
VDS = 0; VGS = −10 V; f = 1 MHz
VDS = 0; VGS = 0; f = 1 MHz;
Tamb = 25 °C
VDS = 0; VGS = −10 V; f = 1 MHz
td
delay time
ton
turn-on time
ts
storage time
toff
turn-off time
note 1
Note
1. Test conditions for switching times are as follows:
VDD = 1.5 V; VGS = 0 to VGSoff (all types)
VGSoff = −12 V; RL = 100 Ω (J108)
VGSoff = −7 V; RL = 100 Ω (J109)
VGSoff = −5 V; RL = 100 Ω (J110).
TYP.
15
50
MAX.
30
85
UNIT
pF
pF
8
15
pF
2
−
ns
4
−
ns
4
−
ns
6
−
ns
handbook, halfpage
VDD
50 Ω
0.1 µF
10 nF
10 µF
RL
DUT
SAMPLING
SCOPE
50 Ω
50 Ω
MGE773
Fig.2 Switching circuit.
1996 Jul 30
4
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