J108 Datasheet, PDF (3/7 Pages) NXP Semiconductors – N-channel silicon junction FETs

Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_DS
V_GSO
V_GDO
I_G
P_tot
T_stg
T_j
drain-source voltage
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
open drain
open source
up to T_amb = 50 °C
MIN.
−
−
−
−
−
−65
−
MAX.
±25
−25
−25
50
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)GSS
V_GSoff
I_DSS
I_GSS
I_DSX
R_DSon
gate-source breakdown voltage
gate-source cut-off voltage
J108
J109
J110
drain current
J108
J109
J110
gate leakage current
drain-source cut-off current
drain-source on-state resistance
J108
J109
J110
CONDITIONS
I_G = −1 µA; V_DS = 0
I_D = 1 µA; V_DS = 5 V
V_GS = 0; V_DS = 15 V
V_GS = −15 V; V_DS = 0
V_GS = −10 V; V_DS = 5 V
V_GS = 0; V_DS = 100 mV
MIN.
−
−3
−2
−0.5
80
40
10
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
−25
−10
−6
−4
UNIT
V
V
V
V
V
−
mA
−
mA
−
mA
−3
nA
3
nA
8
Ω
12
Ω
18
Ω
1996 Jul 30
3