BYV79EB Datasheet, PDF (4/7 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79EB series
trr / ns
1000
100
10
IF=10A
IF=1A
1
1
10
100
dIF/dt (A/us)
Fig.7. Maximum t_rr at T_j = 25 ˚C.
Irrm / A
10
1
0.1
IF=10A
IF=2A
0.01
1
10
100
-dIF/dt (A/us)
Fig.8. Maximum I_rrm at T_j = 25 ˚C.
60 ^{IF / A}
Tj = 150 C
50
Tj = 25 C
40
30
20
typ
10
max
0
0
0.5
1.0
1.5
2
VF / V
Fig.9. Typical and maximum forward characteristic
I_F = f(V_F); parameter T_j
1000 ^{Qs / nC}
100
10
IF=10A
5A
2A
1.0
1.0
10
100
-dIF/dt (A/us)
Fig.10. Maximum Q_s at T_j = 25 ˚C.
10 ^{Transient thermal impedance, Zth j-mb (K/W)}
1
0.1
0.01
P_D
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV79E
Fig.11. Transient thermal impedance; Z_{th j-mb} = f(t_p).
July 1998
4
Rev 1.100