BYV79EB Datasheet, PDF (1/7 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79EB series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
k
a
• High thermal cycling performance
tab
3
• Low thermal resistance
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV79EB series is supplied in
the surface mounting SOT404
package.
PINNING
PIN
DESCRIPTION
1 no connection
2 cathode ¹
3 anode
tab cathode
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.9 V
I_F(AV) = 14 A
I_RRM = 0.2 A
t_rr ≤ 30 ns
SOT404
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T_mb ≤ 145˚C
BYV79EB
-
-
-
I_F(AV)
Average rectified forward
current ²
square wave
δ = 0.5; T_mb ≤ 120 ˚C
-
I_FRM
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 120 ˚C
I_FSM
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; with reapplied
V_RRM(max)
I_RRM
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
I_RSM
Non-repetitive peak reverse t_p = 100 µs
-
current
T_stg
Storage temperature
-40
T_j
Operating junction temperature
-
1. It is not possible to make connection to pin 2 of the SOT404 package
2. Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
14
28
150
160
UNIT
V
V
V
A
A
A
A
0.2
A
0.2
A
150
˚C
150
˚C
MIN.
-
MAX.
8
UNIT
kV
July 1998
1
Rev 1.100