BYV32E Datasheet, PDF (4/7 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
trr / ns
1000
100
10
IF=10A
IF=1A
1
1
10
100
dIF/dt (A/us)
Fig.7. Maximum t_rr at T_j = 25 ˚C; per diode
Irrm / A
10
1
0.1
IF=10A
IF=1A
0.01
1
10
100
-dIF/dt (A/us)
Fig.8. Maximum I_rrm at T_j = 25 ˚C; per diode
IF / A
30
Tj=150 C
Tj=25 C
20
10
typ
max
0
0
0.5
1
1.5
VF / V
Fig.9. Typical and maximum forward characteristic
per diode; I_F = f(V_F); parameter T_j
Product specification
BYV32E, BYV32EB series
100 ^{Qs / nC}
10
IF=10A
5A
2A
1A
1.0
1.0
10
100
-dIF/dt (A/us)
Fig.10. Maximum Q_s at T_j = 25 ˚C; per diode
10 ^{Transient thermal impedance, Zth j-mb (K/W)}
1
0.1
0.01
P_D
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV32E
Fig.11. Transient thermal impedance; per diode;
Z_{th j-mb} = f(t_p).
July 1998
4
Rev 1.200