BYV32E Datasheet, PDF (1/7 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV32E, BYV32EB series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.85 V
I_O(AV) = 20 A
I_RRM = 0.2 A
t_rr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
tab
tab
1 anode 1 (a)
2 cathode (k) ¹
3 anode 2 (a)
2
tab cathode (k)
1 23
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
Peaqk repetitive reverse
voltage
Crest working reverse voltage
Continuous reverse voltage
BYV32E / BYV32EB
-
-
-
I_O(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_stg
T_j
Average rectified output current square wave; δ = 0.5;
-
(both diodes conducting)
T_mb ≤ 115 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 115 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
V_RWM(max)
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
1 It is not possible to make connection to pin 2 of the SOT404 package
MAX.
-150
150
-200
200
150
200
150
200
20
20
125
137
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
July 1998
1
Rev 1.200