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BYQ30E-200_15 Datasheet, PDF (4/11 Pages) NXP Semiconductors – Dual ultrafast power diode
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NXP Semiconductors
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
with heatsink compound; both diodes
conducting; see Figure 3
with heatsink compound; per diode;
see Figure 3
10
Zth(j-mb)
(K/W)
1
10−1
per diode
both diodes
BYQ30E-200
Dual ultrafast power diode
Min Typ Max Unit
-
-
2.5 K/W
-
-
3
K/W
-
60
-
K/W
003aae840
10−2
10−3
10−6
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width
BYQ30E-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2010
© NXP B.V. 2010. All rights reserved.
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