BYQ30E-200_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual ultrafast power diode

BYQ30E-200
Dual ultrafast power diode
Rev. 4 — 1 September 2010
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package
1.2 Features and benefits
„ Fast switching
„ High thermal cycling performance
„ Low forward volt drop
„ Low thermal resistance
„ Reverse surge capability
„ Soft recovery characteristic
1.3 Applications
„ Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_RRM
repetitive peak
reverse voltage
I_O(AV)
average output
current
squire-wave pulse; δ = 0.5 ;
T_mb ≤ 104 °C; both diodes
conducting;
see Figure 1; see Figure 2
Static characteristics
V_F
forward voltage I_F = 8 A; T_j = 150 °C;
see Figure 4
Dynamic characteristics
t_rr
reverse recovery I_R = 1 A; I_F = 0.5 A;
time
I_R(meas) = 0.25 A; T_j = 25 °C;
step recovery; see Figure 6
Min Typ Max Unit
-
-
200 V
-
-
16 A
-
0.84 0.95 V
-
12 22 ns