BYD33 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Fast soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD33 series
SYMBOL
PARAMETER
-d-d--I--t^R--
maximum slope of reverse recovery
current
BYD33D to J
BYD33K to V
CONDITIONS
when switched from
I_F = 1 A to V_R ≥ 30 V
and dI_F/dt = −1 A/µs;
see Fig.20
MIN. TYP. MAX. UNIT
−
−
−
−
6 A/µs
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
120
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 18
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