BYD33 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Fast soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD33 series
SYMBOL
PARAMETER
I_FRM
repetitive peak forward current
BYD33D to M
BYD33U and V
I_FSM
non-repetitive peak forward current
E_RSM
T_stg
T_j
non-repetitive peak reverse
avalanche energy
BYD33D to J
BYD33K to V
storage temperature
junction temperature
CONDITIONS
T_amb = 65 °C; see Figs 8 and 9
t = 10 ms half sine wave;
T_j = T_{j max} prior to surge;
V_R = V_RRMmax
L = 120 mH; T_j = T_{j max} prior to
surge; inductive load switched off
see Figs 12 and 13
MIN. MAX. UNIT
−
7A
−
6A
−
20 A
−
10 mJ
−
7 mJ
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
V_(BR)R
I_R
reverse avalanche breakdown
voltage
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
reverse current
t_rr
reverse recovery time
BYD33D to J
BYD33K and M
BYD33U and V
C_d
diode capacitance
CONDITIONS
I_F = 1 A; T_j = T_{j max};
see Figs 14 and 15
I_F = 1 A;
see Figs 14 and 15
I_R = 0.1 mA
V_R = V_RRMmax;
see Fig.16
V_R = V_RRMmax;
T_j = 165 °C; see Fig.16
when switched from
I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A
see Fig.21
f = 1 MHz; V_R = 0 V;
see Figs 17 and 18
MIN.
−
−
300
500
700
900
1 100
1 300
1 500
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
20
MAX. UNIT
1.1 V
1.3 V
−V
−V
−V
−V
−V
−V
−V
1 µA
100 µA
250 ns
300 ns
500 ns
− pF
1996 Sep 18
3